2. differences between the test circuit and the application circuit, such as bias conditions, opportunities for annealing or ELDRS;
3. differences in the radiation susceptibility of different components within the same batch, or within the collection of batches selected for testing;
4. differences between part batches or collection of batches, where errors arise from relating the results from component irradiations to devices employed in the final application;
5. the possible effects of packaging on low-energy proton beams (<30 MeV);
NOTE
The reason is that this
packaging can affect the penetration and energy (LET
) of the particles.
6. the stated accuracy of the facility together with the uncertainties in requirement 5.5.1a.1, taking into account position, attenuation;
NOTE 1 In the absence of contemporaneous beam characterisation, quoted particle accelerator characteristics are assumed to be no better than ±30 % accurate in beam intensity.
NOTE 2 For g-ray sources such as 60Co, uncertainties in the total ionising dose delivered are typically better than ±10 %.
7. the variations in performance within a device population, be determined by employing one or more of the following and in accordance with the radiation hardness assurance programme defined according to ECSS-Q-ST-60 for Class 1, 2 and 3 components:
(a) statistical techniques applied to test data;
(b) data from heritage information concerning the part;
(c) data from previous worst case analyses.
NOTE Such techniques are defined in the clauses of ECSS-Q-ST-60 relevant to “Radiation Hardness”.