a.
Experimental data used to
calculate single event rates shall
cover a LET
range (for heavy-ion induced SEEs) or energy range (for proton and
neutron-induced effects) capable to ensure that:
1.
The lower LET
or energy is less
than the threshold for the onset of the single event effect.
NOTE 1 The
lower LET
or energy threshold can require extensive testing to determine. For
protons it is influenced by packaging, while for neutrons it can be in the
region of thermal energies if Boron-10 is present.
NOTE 2 Lower
LET
or energy threshold for the testing is specified in the radiation hardness
assurance programme under ECSS-Q-ST-60.
2.
For heavy ions, the upper LET
threshold corresponds either to:
(a)
the maximum LET
expected for
the environment,
(b)
the device LET
saturation cross
section,
NOTE Saturation is defined according to the radiation hardness assurance programme established under ECSS-Q-ST-60.
(c) 60 MeV×cm2/mg.
3. For nucleons, the maximum energy corresponds either to:
(a) the maximum energy for the predicted environment, or
(b) the device saturation cross section is in the range.
NOTE Saturation is defined according to the radiation hardness assurance programme established under ECSS-Q-ST-60.
(c) 150 MeV for all SEE phenomena.
b. Cross section data shall be from tests where the test particle’s range in the material ensures it is able to penetrate the entire sensitive volume of the device.
NOTE The reason is that many modern devices (including power semiconductors) have significant vertical structure and very thick epitaxial layers and sufficient range of the incident test particle is required to adequately penetrate through the entire sensitive volume of the device.
c. The experimental data used for device conditions shall be either those expected for operational conditions, or such that the experiment provide worse SEE-susceptibility data, as follows:
1. For SRAMs and DRAMs, SEU-dependent electrical conditions are voltage, clock frequency and refresh rate.
2. For SEL, tests are for the maximum power and maximum temperature conditions expected for space application.
3. For SEB, tests correspond to the minimum operating temperature for the application, as this corresponds to maximum SEB susceptibility of the device.
d.
For SEL, SEGR, and SEB, the
potential inaccuracy of LET
cross-section data obtained using obliquely
incident heavy-ion beams shall be analysed and the results reported in
accordance with the RHA programme established under ECSS-Q-ST-60.
NOTE 1 The
reason is that the concepts of sensitive volume and effective LET
are not
strictly valid (see ECSS-E-HB-10-12 Section 8.6.1 to 8.6.3).
NOTE 2 SEHE
cross-section can be a function of particle species and energy (i.e. not just LET
) and angle of
incidence (see ECSS-E-HB-10-12 Section 8.7.4).
NOTE 3 It is important that the ion track width of the particles used in the irradiations is sufficient to cover a significant fraction of the gate region.
NOTE 4 There are synergies between SEHE rates and cumulative dose (TID) as well as microdose effects.